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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제1호
- 발행연도
- 2022.2
- 수록면
- 30 - 44 (15page)
- DOI
- https://doi.org/10.1007/s42341-021-00315-2
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초록· 키워드
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This paper presents the design and analysis of the RF-MEMS Capacitive type switch. Here, we have proposed different stages of shunt switches for better performance. The objective of the proposed work is to design different beam structures and to calculate pull-in voltage with various gaps, beam thickness, and materials in FEM tool. By decreasing the pull-in voltage we have taken perforations and diff erent meandering techniques (uniform and non-uniform). The material selection impacts the switch performance, here the dielectric material is taken as silicon nitride, the beam material is considered as gold, because of its high conducting material. The pull-in voltage of the proposed non-uniform meander type switch is 1.9 V, the RF-performance is measured in the HFSS and ADS equivalent circuit simulator tools, the return and insertion losses are obtained as ?41.74 dB and -0.95 dB at 43 GHz, 40.10 GHz. The switch measured better isolation as ? 36.25 dB, -20.55 dB at 20-40 GHz. The switch performance is obtained at 20-50 GHz range, therefore it can be feasible for 5G applications.
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