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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제3호
- 발행연도
- 2021.1
- 수록면
- 235 - 242 (8page)
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In this paper, we have analyzed the effect of high-k dielectrics in the tunneling barrier of bandgap engineered Silicon Oxide Nitride Oxide Silicon (BE-SONOS). The high-k materials used, hereby, are scandates and aluminates of the rare earth materials such as GdScO, LuAlO, and LaAlO. These materials have high permittivity and low valence band off set that helps in improving the erase speed and retention trade-off . Also, lower conduction band off set of these high-k dielectrics leads to the improvement of program speed. Here, scandate of the rare earth material, GdScO, substitutes the nitride (SiN) layer and the aluminates of the rare earth material, LuAlO and LaAlO, are used in place of top oxide (SiO 2 ) layer in tunneling barrier (SiO 2 /SiN/SiO 2 ) of BE-SONOS. Further, with the scaling of the gate length; for the same effective oxide thickness, it has been observed that the investigated stacks encompass the same memory dynamics as before the gate length scaling. Consequently, the investigated tunneling barrier stacks represent robustness in terms of retention (at room temperature and 150 ºC) and enhanced program speed as well as erase speed and retention trade-off .
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참고문헌 (22)
참고문헌 신청
K. Kim / 2005 / Technology for sub 50 nm node DRAM and NAND fl ash manufacturing / Proceedings of IEDM Tech. Dig :539~543
A. Beohar / 2018 / Analog/RF characteristics of a 3D Cyl underlap GAA-TFET based on a GeSource using fringing fi eld engineering for low power applications / Springer J. Comput. Electron 17(4):1650~1657
S. -Y. Wang / 2008 / Reliability and processing eff ects of bandgap-engineered SONOS(BE-SONOS)fl ash memory and study of the gate-stack scaling capability / IEEE Trans Device Mater. Reliab 8(2):416~425
H-T Lue / 2005 / BE-SONOS: A Band gap Engineered SONOS with excellent performance and reliability / Proc. Of IEDM Tech. Dig :547~550
DM Rifqie / 2019 / MA Sulthoni and I Idris, 2019 Study on Trapped Charge SONOS NVSM with Eff ect of Vg and Vds Programming state Variation / 2019 International Symposium on Electronics and Smart Devices (ISESD) :1~4
A. Beohar / 2018 / Analog/RF characteristics of a 3D Cyl underlap GAA-TFET based on a GeSource using fringing fi eld engineering for low power applications / Springer J. Comput. Electron 17(4):1650~1657
S. -Y. Wang / 2008 / Reliability and processing eff ects of bandgap-engineered SONOS(BE-SONOS)fl ash memory and study of the gate-stack scaling capability / IEEE Trans Device Mater. Reliab 8(2):416~425
H-T Lue / 2005 / BE-SONOS: A Band gap Engineered SONOS with excellent performance and reliability / Proc. Of IEDM Tech. Dig :547~550
DM Rifqie / 2019 / MA Sulthoni and I Idris, 2019 Study on Trapped Charge SONOS NVSM with Eff ect of Vg and Vds Programming state Variation / 2019 International Symposium on Electronics and Smart Devices (ISESD) :1~4
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