Effects of Trapezoidal Fin Shape on Performance of Negative-capacitance FinFETs

Mengjie Zhao; Weifeng Lü; Ziqiang Xie; Mengxue Guo; Mi Lin

doi:10.5573/JSTS.2022.22.5.283

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자료유형: 학술저널

저자정보: Mengjie Zhao (Hangzhou Dianzi University) Weifeng Lü (Hangzhou Dianzi University) Ziqiang Xie (Hangzhou Dianzi University) Mengxue Guo (Hangzhou Dianzi University) Mi Lin (Hangzhou Dianzi University)

저널정보: 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.5

발행연도: 2022.10

수록면: 283 - 290 (8page)

DOI: 10.5573/JSTS.2022.22.5.283

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In this study, a negative-capacitance fin field effect transistor (NC-FinFET) with a varying trapezoidal fin shape is proposed. The effects of varying the width of the top fin on the performance of the trapezoidal NC-FinFET with different ferroelectric layer thicknesses are investigated in detail. Using the technology computer-aided design simulation, it was determined that the trapezoidal NC-FinFET has lower on- and off-state currents and a higher switching current ratio, as well as a higher threshold voltage, than a traditional rectangular NCFinFET. Thus, the device demonstrates an improved subthreshold swing and drain-induced barrier lowering. Unlike a conventional trapezoidal FinFET, the variations in the parameter performance for an NC-FinFET exhibit non-uniform trends. This study provides a predictive estimation for trapezoidal fin-induced variations in an NC-FinFET at the early design stage.

#Negative-capacitance effect #FinFET #fin shape variation #trapezoidal FinFET

참고문헌 (26)

참고문헌 신청

S. Salahuddin, and S. Datta, “Use of negative capacitance to provide voltage amplification for low power nanoscale devices.” Nano letters, Vol. 8, No. 2, pp. 405-410, Mar., 2008.

O. Prakash, et al, “Impact of self-heating on negative-capacitance FinFET: Device-circuit interaction.” Electron Devices, IEEE Transactions on, Vol. 68, No. 4, pp. 1420-1424, Apr., 2021.

B. Obradovic, et al. “Modeling transient negative capacitance in steep-slope FeFETs,” Electron Devices, IEEE Transactions on, Vol. 65, No. 11, pp. 5157-5164, Nov., 2018.

Y. K. Lin, et al, “Spacer engineering in negative capacitance FinFETs.” IEEE Electron Device Letters, Vol. 40, No. 6, pp. 1009-1012, Jun., 2019.

M. Y. Kao, et al “Analysis and modeling of polarization gradient effect on negative capacitance FET.” Electron Devices, IEEE Transactions on, Vol. 67, No. 10, pp. 4521-4525, Oct., 2020.

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