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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2023.5
- 수록면
- 2,004 - 2,009 (6page)
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초록· 키워드
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In order to satisfy the demand of higher switching frequency and power density, silicon carbide (SiC) device, under some circumstances, is necessary due to its faster turning-on process and higher breakdown voltage compared to Si device. However, the selection of silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) will also result in higher di/dt and dv/dt, which bring problems not that serious while using Si MOSFET. Facing the contradiction between electromagnetic interference (EMI) and switching loss, the proposed active gate driver (AGD) controls the slew rate as an appropriate method to meet practical requirements in EMI controlled by gate operation, and switching loss which can be reduced by using the inevitable parasitic parameters of the circuit.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. THE PROPOSED AGD
Ⅲ. CONCLUSIONS
REFERENCES
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