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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2015.6
- 수록면
- 1,428 - 1,433 (6page)
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초록· 키워드
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A new three phase three transistor voltage source inverter has recently appeared in the literature which has attractive features compared to the conventional voltage source inverter topologies. In particular, it requires a less number of costly switching devices, such as high performance transistors. This inexpensive design is considered to be advantageous in medium to high power application requiring traditional silicon based power electronic transistors or with newly-evolving yet expensive Silicon Carbide or Gallium Nitride based power semiconductor devices. This paper investigates the realization of the inverter circuit using several different PWM techniques. Theoretical analyses and simulation results are provided to verify the performance and feasibility of the proposed concept.
목차
Abstract
I. INTRODUCTION
II. BASIC OPERATION OF THE TOPOLOGY
III. PWM CONTROL SCHEME
IV. SIMULATION RESULT
V. CONCLUSIONS
REFERENCES
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