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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.18 No.3
- 발행연도
- 2018.6
- 수록면
- 301 - 306 (6page)
- DOI
- 10.5573/JSTS.2018.18.3.301
이용수
초록· 키워드
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Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In0.53Ga0.47As junction was well formed without penetration of Ni-InGaAs into the In0.53Ga0.47As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (17)
참고문헌 신청
S. Oktyabrsky and P. D. Ye, “Properities and Trade-Offs of Compound Semiconductor MOSFETs,” Fundamentals of III-V Semiconductor MOSFETs (Springer Science+Business Media LLC, 2010), Chap. 2.
S.-D. Kim, et al, “Advanced Model and Analysis of Series Resistance for CMOS Scaling Into Nanometer Regime-Part II: Quantitative Analysis,” IEEE Transactions on Electron Devices, Vol. 49, No. 3, pp. 467-472, Mar. 2002.
J. A. del. Alamo, “Nanometre-scale Electronics with III-V Compound Semiconductors,” Nature, Vol. 479, pp. 317-323, Nov., 2011.
E. Y.-J. Kong, et al, “Investigation of Pd-InGaAs for the Formation of Self-aligned Source/Drain Contacts in InGaAs Metal-Oxide-Semiconductor Field-Effect Transistors,” Solid-State Electronics, Vol. 85, pp. 36-42, July, 2013.
S. Kim, et al., “In0.53Ga0.47As Metal-Oxide- Semiconductor Field-Effect Transistors with Selfaligned Metal Source/Drain Using Co-InGaAs alloys,” Applied Physics Letters, Vol. 100, No. 7, pp. 073504, Feb., 2012.
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