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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제3호
- 발행연도
- 2015.1
- 수록면
- 156 - 161 (6page)
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In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φm. As a consequence, the behavior of the leakage current improves with increased Φm. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.
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참고문헌 (13)
참고문헌 신청
C. Hu / 2010 / Modern Semiconductor Devices for Integrated Circuits / Pearson/Prentice Hall : 351 ~
C. Meinhardt / 2014 / Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations / Microelectronics Reliability 54 (
Emilie Bernard / 2008 / Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI / Solid-State Electronics 52 (9) : 1297 ~ 1302
J. P. Collinge / 2008 / FinFET and Other Multi-Gate Transistors / Springer : 339 ~
J.P. Colinge / 2007 / Multi-gate SOI MOSFETs / Microelectronic Engineering 84 (9-10) : 2071 ~ 2076
C. Meinhardt / 2014 / Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations / Microelectronics Reliability 54 (
Emilie Bernard / 2008 / Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI / Solid-State Electronics 52 (9) : 1297 ~ 1302
J. P. Collinge / 2008 / FinFET and Other Multi-Gate Transistors / Springer : 339 ~
J.P. Colinge / 2007 / Multi-gate SOI MOSFETs / Microelectronic Engineering 84 (9-10) : 2071 ~ 2076
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