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논문 기본 정보

자료유형
학술저널
저자정보
Gil Su Jang (Seoul National University) Du Yun Kim (Seoul National University) Nong-Moon Hwang (Seoul National University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.17 No.2
발행연도
2021.1
수록면
172 - 180 (9page)

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Effects of sputtering power on the deposition rate and microstructure, crystallinity, and electrical properties of Ag films duringdirect current (DC) magnetron sputtering are investigated. Thin films (~ 100 nm) are deposited at sputtering powers of 10, 20, 50,100, 200 and 300 W and analyzed by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmissionelectron microscopy (TEM) and a four-point probe. The film deposited at a sputtering power of 10 W has the lowest growthrate, but the highest crystalline quality, with the lowest full width at half maximum (FWHM) and the lowest resistivity. The filmdeposited at a sputtering power of 200 W has the highest growth rate, and the second best crystalline quality in view of FWHMand resistivity. The film deposited at a sputtering power of 50 W has the moderate growth rate, and the worst crystalline qualityin view of FWHM and resistivity. High-resolution TEM observations reveal that films deposited at sputtering powers of 10and 200 W have far fewer defects, such as grain boundaries, dislocations and stacking faults than those deposited at a sputteringpower of 50 W. Such deposition behavior could be explained by sputtering power, which affected the generation of the chargednanoparticles. And the high quality of films could be obtained at a high deposition rate, in which charge plays an important role.

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